Samsung's zHBM Stacks Memory Directly on AI Chips for 8x Performance
Samsung Debuts zHBM Prototype, Stacking Memory Directly on AI Accelerators
Samsung unveiled zHBM at FMS 2026, a 3D architecture that vertically stacks HBM on top of AI accelerators to cut data travel distance. The company claims up to eight times the performance of HBM5, three times better performance per watt, and over 50% lower thermal resistance. Samsung also showed zNAND-O, 400-plus-layer V10 BV-NAND, HBM4E, HBM5, and LPDDR5X-PIM, positioning itself as the only IDM offering a one-stop AI memory solution.
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