Bridging the Gap Between DRAM RowHammer Experiments and Device Modeling

Demystifying DRAM Read Disturbance: RowHammer and RowPress Phenomena

Bridging the Gap Between DRAM RowHammer Experiments and Device Modeling

I aim to resolve inconsistencies between experimental observations and device-level models of DRAM read disturbance, specifically RowHammer and RowPress. By identifying gaps in current physical explanations, I present rigorous TCAD simulations that align with real-world bitflip data. This work updates our understanding of error mechanisms and highlights key parameters essential for accurate simulation and effective mitigation strategies.

Existing device-level models do not fully explain all major empirical observations of DRAM read disturbance bitflips.

More from this day

2026-07-31